发明名称 |
METHOD AND APPARATUS FOR PLASMA TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment adapted so as to prevent thermal damage to a substrate during consecutive plasma treatments to prevent it from being deformed or from being adversely affected in its properties. SOLUTION: A rise in the temperature of the surface of a substrate 5 can be prevented by indirectly cooling the surface of the substrate 5 by providing a cooling holder 11 in the position opposite to the substrate 5 during consecutive plasma treatments and sealing a gas having a high heat conductivity in the space between the substrate 5 and the holder 11 spaced therefrom. |
申请公布号 |
JP2002001099(A) |
申请公布日期 |
2002.01.08 |
申请号 |
JP20000184176 |
申请日期 |
2000.06.20 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SUEMITSU TOSHIYUKI;SUEYOSHI TAKASHI;KITAI TAKAHIRO |
分类号 |
H05H1/46;B01J19/08;C23C14/34 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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