发明名称 METHOD AND APPARATUS FOR PLASMA TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment adapted so as to prevent thermal damage to a substrate during consecutive plasma treatments to prevent it from being deformed or from being adversely affected in its properties. SOLUTION: A rise in the temperature of the surface of a substrate 5 can be prevented by indirectly cooling the surface of the substrate 5 by providing a cooling holder 11 in the position opposite to the substrate 5 during consecutive plasma treatments and sealing a gas having a high heat conductivity in the space between the substrate 5 and the holder 11 spaced therefrom.
申请公布号 JP2002001099(A) 申请公布日期 2002.01.08
申请号 JP20000184176 申请日期 2000.06.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUEMITSU TOSHIYUKI;SUEYOSHI TAKASHI;KITAI TAKAHIRO
分类号 H05H1/46;B01J19/08;C23C14/34 主分类号 H05H1/46
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