发明名称 Method of forming semiconductor device bump electrodes
摘要 In a method of manufacturing bump electrodes, a solder paste material is filled in concave parts provided on one surface of a jig for forming bumps, and the solder paste material is melted under the condition in that the concave parts of the jig for forming bumps face electrode pads provided on one surface of a substrate (a semiconductor chip or a circuit board), to form bump electrodes on the electrode pads of the substrate, whereby the size of the bump electrodes formed on electrode pads can be uniform. Furthermore, a short circuit among the electrode pads of the substrate (a semiconductor chip or a circuit board) can be prevented. Furthermore, the yield in a production process of a semiconductor device having bump electrodes can be increased.
申请公布号 US6335271(B1) 申请公布日期 2002.01.01
申请号 US20000462795 申请日期 2000.01.13
申请人 HITACHI, LTD. 发明人 FUKUYAMA SATORU
分类号 H01L21/48;H01L21/60;H01L21/68;H01L23/10;H05K3/26;H05K3/34;(IPC1-7):H01L21/44 主分类号 H01L21/48
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