| 发明名称 |
Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
| 摘要 |
A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitride semiconductor film and the substrate in the concave portion.
|
| 申请公布号 |
US6335546(B1) |
申请公布日期 |
2002.01.01 |
| 申请号 |
US19990364768 |
申请日期 |
1999.07.30 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TSUDA YUHZOH;YUASA TAKAYUKI |
| 分类号 |
H01L21/20;H01L33/00;H01L33/20;H01L33/32;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
