| 摘要 |
<p>The invention concerns the electrical insulation by depositing an insulating silica layer on chip wafers, wafers produced by being diced in a silicon wafer, itself associated with an intermediate adhesive plastic support, which maintains the chips in position after they have been cut out; it consists in: a) preparing a treating liquid phase such as a fluosilic acid silica-saturated at a temperature between 15 °C and 35 °C; b) immersing the chips arranged on their intermediate support in the phase; c) adding an agent providing silica-supersaturation of the phase; d) maintaining the chips in said treatment medium for not more than 10 hours at a temperature ranging between about 15 °C and about 50 °C.</p> |
