| 摘要 |
PROBLEM TO BE SOLVED: To provide an MRAM having a minimum area necessary condition. SOLUTION: The MRAM memory comprises a memory array (2) having, at least one memory cell layer disposed on a semiconductor substrate (4) and magnetoresistance memory elements (6a, 6b) contacted with magnetoresistance memory elements (6a, 6b) in the array (2), a word line (7) and bit lines (8, 9) for contacting with the elements (6a, 6b) in the array (2), and drive logical units (5a, 5b and 5c) for driving the memory elements (6a, 6b) in the array (2) via the work and bit lines (7, 8 and 9) in such a manner that the units (5a, 5b and 5c) are integrally formed in the substrate (4) and under the array (2) thereabove.
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