| 摘要 |
A method for manufacturing a semiconductor device separately forms two collector regions, two base extension regions, two base regions, and two collector extension regions on a first bipolar transistor forming region and a second bipolar transistor forming region that are formed on a semiconductor substrate, and includes a step of forming an emitter region on the first bipolar transistor region and forming, in the same process step, a base contact layer for an emitter electrode in the second bipolar transistor region as well, after which an emitter electrode is formed on the base contact layer.
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