| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device for emitting a plurality of laser beams with different wavelengths from one emission spot. SOLUTION: At a region in front on an n-type GaAs substrate 100, AlGaIn- family first semiconductor lamination structure 110 having an active layer 112 where an AlGaInP layer and a GaInP layer are laminated is provided. At the same time, at a region in the rear side on the n-type GaAs substrate 100, AlGaAs-family second semiconductor lamination structure 120 having an active layer 122 where an AlGaAs layer and a GaAs layer are laminated is provided. A stripe region 112a of the active layer 112 of the first semiconductor lamination structure 110, and a stripe region 122a of the active layer 122 of the second semiconductor lamination structure 120, are arranged on the same straight line.
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