| 摘要 |
A flat workpiece 5 (silicon wafer) is driven so as to rotate in horizontal by a workpiece driving device 12. A cylindrical conducting grindstone 14 is provided, the outer periphery of which is in contact with the surface of the workpiece. A grindstone rotating device 16 drives the grindstone about the axis thereof. A grindstone reciprocating device 18 moves the grindstone with a reciprocating motion along the surface of the workpiece. An axial guiding device 20 keeps the center line X of the grindstone at a predetermined angle to the horizontal axis. An ELID device 22 electrolytically dresses the outer periphery of the grindstone. The center line X of the grindstone is held at a predetermined angle theta to the horizontal axis, and at the same time, the outer periphery of the grindstone is dressed electrolytically.
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