Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism

摘要

A vapor deposition apparatus comprises a first run line for mixing vapor deposition source(s) with carrier gas, a second run line for supplying source mixture to vapor deposition region, vent lines for detouring source mixture away from the deposition region and for exhausting the source mixture, and a line-switching mechanism for switching the flow of source mixture. A vapor deposition apparatus comprises first and second run lines (27, 28), vent lines (29, 29a), and line-switching mechanism. The first run line combines vapor deposition source(s) with carrier gas in advance and passes the resultant source mixture. The second run line supplies the source mixture to a vapor deposition region (39), and the vent line allows the source mixture to detour away from the vapor deposition region and exhausts the source mixture. The line-switching mechanism switches the flow of the source mixture from the first run line to either the second run line or the vent line. An Independent claim is also included for vapor-growing a stacked layer structure utilizing the above apparatus.