| 摘要 |
PROBLEM TO BE SOLVED: To provide an oscillator with a field-effect transistor for generating an oscillation frequency with precision without influence from parasitic capacitance. SOLUTION: Each source of transistors 101, and 102 are grounded. The gate of the transistor 101 and the drain of the transistor 102 are connected, and the drain of the transistor 101 and the gate of the transistor 102 are connected. An inductor 103 is connected with the drain of the transistor 101, and an inductor 104 is connected with the drain of the transistor 102. The other end of each inductor 103 or 104 is connected to a power source. In the transistors 101 and 102, the drain electrodes and the drain diffusion regions are arranged in desired area and shapes. In addition, an oxide film between a polysilicon gate and substrate are formed in desired area and shapes all over the substrate except for a channel forming region of a transistor between the drain and the source so that the parasitic capacity of the drain electrode and the gate electrode is set at a desired value in the structure. The substrate of the transistor is connected to the voltage source.
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