发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF, MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/REPRODUCING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element together with its manu facturing method having a good magnetoresistance ratio dR/R which is excellent in corrosion-resistance, thermal stability, and ESD-resistance characteristics, a magnetoresistance effect type magnetic head together with its manufacturing method, and a magnetic recording/reproducing equipment. SOLUTION: On a board 2, there are provided an anti-ferromagnetic layer 9 of anti-ferromagnetic material having a crystal structure of face-centered tetragonal system, a pin layer 11, a spacer layer 5, and a free layer 4. The pin layer 11 has a first ferromagnetic layer 8 hitting the anti-ferromagnetic layer 9, a non-magnetic layer 7, and a second ferromagnetic layer 6 laminated. Among the layers, the crystal particle sizes of only the anti-ferromagnetic layer 9, the first ferromagnetic layer 8, and the non-magnetic layer 7 are 50 nm or less.
申请公布号 JP2001345494(A) 申请公布日期 2001.12.14
申请号 JP20000160978 申请日期 2000.05.30
申请人 SONY CORP 发明人 MAESAKA AKIHIRO
分类号 G01R33/09;G11B5/39;H01F10/14;H01F10/32;H01F41/18;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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