发明名称 |
NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES |
摘要 |
A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active structure of aluminum gallium nitride (14) on the gallium nitride layer, a passivation layer (23) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts (21, 22, 23) to the aluminum gallium nitride active structure.
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申请公布号 |
WO0004587(A9) |
申请公布日期 |
2001.12.13 |
申请号 |
WO1999US12287 |
申请日期 |
1999.06.02 |
申请人 |
CREE, INC.;SHEPPARD, SCOTT, THOMAS;ALLEN, SCOTT, THOMAS;PALMOUR, JOHN, WILLIAMS |
发明人 |
SHEPPARD, SCOTT, THOMAS;ALLEN, SCOTT, THOMAS;PALMOUR, JOHN, WILLIAMS |
分类号 |
H01L29/26;H01L21/338;H01L29/20;H01L29/24;H01L29/267;H01L29/45;H01L29/778;H01L29/812;(IPC1-7):H01L29/778 |
主分类号 |
H01L29/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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