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发明名称
CMOS integrated circuit architecture incorporating deep implanted emitter region to form auxiliary bipolar transistor
摘要
申请公布号
EP0694970(B1)
申请公布日期
2001.12.12
申请号
EP19950111230
申请日期
1995.07.18
申请人
HARRIS CORPORATION
发明人
FULLER, ROBERT T.;MCCARTY, CHRIS;GASNER, JOHN T.;CHURCH, MICHAEL D.
分类号
H01L27/06;(IPC1-7):H01L27/06
主分类号
H01L27/06
代理机构
代理人
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地址
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