| 摘要 |
A semiconductor memory device has a semiconductor substrate and a plurality of memory transistors, each having a gate electrode, a source diffused layer and a drain diffused layer and provided in array. Data is fixedly written as a difference between threshold voltages depending on an existence or non-existence of a doped channel layer. The doped channel layer extends to at least one of the source and the drain diffused layers. In order to manufacture such memory device, after forming a plurality of memory transistors, the steps of providing a mask having an opening formed so that a side surface of the gate electrode and substrate surface of one of the source diffused layer and the drain diffused layer are exposed and providing a doped channel layer under the gate electrode and in one of the source and drain diffused layers by implanting impurity ions through the opening with an inclined angle selected from a range from perpendicularity to parallelism to the substrate.
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