| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a ridge waveguide semiconductor laser element which is of good productivity. SOLUTION: The manufacturing method is composed of a process wherein, by an MOCVD method, a clad layer 2, an active layer 3, a clad layer 4, a cap layer 5 and a cap protective layer 6 are laminated sequentially on a substrate 1, the layer 6 is etched and removed selectively, and, immediately after the cap layer 5 is exposed, an insulating-layer pattern 7 is formed on the cap layer 5 by a sputtering method. The manufacturing methods is composed of a process wherein the cap layer 5 in a part other than a part which is covered with the pattern 7 is etched up to the halfway part of the clad layer 4 in the radiating direction of a laser beam and a ridge part 8 is formed. The manufacturing method is composed of a process wherein current constriction layers 9, 9 which sandwich the ridge 8 are formed on the clad layer 4, the pattern 7 is then removed and a contact layer 10 is laminated on the ridge 8 and the layers 9, 9.
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