| 摘要 |
PROBLEM TO BE SOLVED: To perform nice embedding of low temperature and minute clearance of a coating process and coating separation prevention in a posterior process, for instance, in a logic memory mixed loading device or the like. SOLUTION: The manufacturing method of a semiconductor device performs a first process for forming an insulation film by thermal CVD (chemical gas growth) on a board having on a surface a recess part made by patterning when, for instance, a BPSG film is coated and a second process forming the insulation film by thermal CVD (chemical gas growth) under pressure lower than the first process in order without continuously breaking vacuum and without interrupting the supply of a raw gas in a process from the first process to the second process. |
