| 摘要 |
PURPOSE: To form an alignment layer having no irregular film thickness on an electrode substrate having a spacer. CONSTITUTION: An alignment layer material 7 is transferred onto a TFT (thin film transistor) substrate 1 by using a printing plate 11 having recesses 12 at the position corresponding to the spacer 6 on the TFT substrate 1, After transferring, the film material is preliminarily dried at a temperature as low as 20 to 30deg.C. The thickness of the alignment layer material 7 applied on the TFT substrate 1 having the spacer is controlled to >=80 nm which is thicker than a usual material.
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