| 摘要 |
<p>A nitride semiconductor light-emitting device characterized in that it includes a light-emitting layer (106) having a multiple quantum well structure where quantum well layers and barrier layers are alternately formed, the composition of the material of the quantum well layer is XN1-x-y-zAsxPySbz (0 ≤ x ≤ 0.15, 0 ≤ y ≤ 0.2, 0 ≤ z ≤ 0.05, x + y + z > 0) where X represents one or more kinds of group III element, and the barrier layers are made of a nitride semiconductor containing at least Al.</p> |
