| 摘要 |
<p>A method for producing a bonded wafer comprising an ion implanting step of forming a micro bubble layer (implantation layer) in a first wafer by implanting at least one of hydrogen ions and rare gas ions at least from the surface of the first wafer, a bonding step for bringing the surface of the first wafer subjected to the ion implantation into close contact with the surface of a second wafer, and a separating step for of separating the first wafer at the micro bubble layer, characterized in that ion implantation at the ion implanting step is performed a plurality of times. Such a bonded wafer, a method for producing a bonded wafer for reducing micro voids generated by ion-implantation separation method, and a bonded wafer having no micro void are also disclosed.</p> |
