| 发明名称 |
Semiconductor device having element with high breakdown voltage |
| 摘要 |
<p>A semiconductor device which contains an electrode or an interconnection subjected to a high voltage prevents current leakage due to polarization of a mold resin. In this semiconductor device, a glass coat film 13a covering a semiconductor element has an electrical conductivity in a range defined by the following formula (1) under the conditions of temperature between 17 DEG C and 145 DEG C: <MATH> (E: an electric field intensity ÄV/cmÜ, E≥2x10<4> ÄV/cmÜ> Owing to employment of the electrically conductive glass coat film, an electron current flowing through the conductive glass coat film suppresses an electric field caused by polarization of a mold resin. <IMAGE></p> |
| 申请公布号 |
EP0814508(B1) |
申请公布日期 |
2001.12.05 |
| 申请号 |
EP19960111089 |
申请日期 |
1996.07.10 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TERASHIMA, TOMOHIDE |
| 分类号 |
H01L27/088;H01L21/316;H01L21/8234;H01L21/8238;H01L23/31;H01L23/522;H01L27/092;H01L29/06;H01L29/40;(IPC1-7):H01L23/31 |
主分类号 |
H01L27/088 |
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