发明名称 Highly effective charge pump employing NMOS transistors
摘要 A highly effective charge pump circuit includes a pulse generator for generating a pulse signal in response to a control signal, a first voltage pumping unit for generating a first high voltage in response to the control signal and the pulse signal, a second voltage pumping unit for generating a second high voltage of the same level as the first high voltage in response to the control signal and the pulse signal, and a voltage transmitting unit that receives and outputs first high voltage when the second high voltage is applied. The charge pump obtains a high voltage using NMOS transistors.
申请公布号 US6326833(B1) 申请公布日期 2001.12.04
申请号 US19990430365 申请日期 1999.10.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON BYUNG-SICK
分类号 G11C11/40;H02M3/07;(IPC1-7):G05F1/10 主分类号 G11C11/40
代理机构 代理人
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