发明名称 |
Highly effective charge pump employing NMOS transistors |
摘要 |
A highly effective charge pump circuit includes a pulse generator for generating a pulse signal in response to a control signal, a first voltage pumping unit for generating a first high voltage in response to the control signal and the pulse signal, a second voltage pumping unit for generating a second high voltage of the same level as the first high voltage in response to the control signal and the pulse signal, and a voltage transmitting unit that receives and outputs first high voltage when the second high voltage is applied. The charge pump obtains a high voltage using NMOS transistors.
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申请公布号 |
US6326833(B1) |
申请公布日期 |
2001.12.04 |
申请号 |
US19990430365 |
申请日期 |
1999.10.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON BYUNG-SICK |
分类号 |
G11C11/40;H02M3/07;(IPC1-7):G05F1/10 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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