发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a connection device, having a contact terminal enabling multipoint and high density contact concerning an object to be inspected, and to provide a method for manufacturing the same. SOLUTION: A hole which is to be a mold for forming the contact terminal 103 is formed to a silicon wafer by anisotropic etching, and this mold is used to form the contact terminal 103, an insulating film 104 comprising a polyimide film and outgoing wiring 105. Furthermore, a cushioning layer 108 and a silicon wafer which is to become a substrate 109 are held between the insulating film 104 and a wiring board 107 to be integrated with them, and then the mold is removed. Thereafter, the loading out wiring 105 is connected to the electrode 110a of the wiring board 107 with a solder 111.
申请公布号 JP2001330628(A) 申请公布日期 2001.11.30
申请号 JP20010091643 申请日期 2001.03.28
申请人 HITACHI LTD 发明人 KASUKABE SUSUMU;USAMI MITSUO;UEHARA KEIJIRO;TASE TAKASHI;ISHINO MASAKAZU;KASHIMURA TAKASHI
分类号 G01R31/26;G01R1/073;H01L21/66;(IPC1-7):G01R1/073 主分类号 G01R31/26
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