| 摘要 |
PROBLEM TO BE SOLVED: To reduce the dispersion of central frequencies, when plural devices are produced from the same wafer and to dispense with frequency control work after the production of an IDT or reflector concerning a surface acoustic wave(SAW) device, utilizing the excitation of SH waves. SOLUTION: On the surface of a piezoelectric substrate (wafer) 2, a Ti film 6 (second layer) for the thickness of 5 nm, an Au film 7 (first layer) for the thickness of 150 nm, an Ni film 8 (second layer) for the thickness of 200 nm and an Au film 9 (first layer) for the thickness of 50 nm are successively formed by an EB deposition method and patterned by a lift-off process, so as to become an IDT 3 and reflectors 4 and 5.
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