LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GAN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION, AND A METHOD FOR PRODUCING THE SAME

摘要

The invention relates to a light-emitting-diode chip (1) comprising a sequence of GaN-based epitaxial layers (3) which emit radiation, said layers having an active zone (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided with a reflective contact metallization (6) on its principal surface (9) which faces away from the active zone (19), said metallization comprising a contact layer (15) that is transparent to radiation and a reflective layer (16). The invention also relates to methods for producing light emitting diodes of this type using a thin-film technique and to light-emitting-diode components comprising light-emitting-diode chips of this type.