| 摘要 |
A processor in which insulation members which are easily mounted and positioned and have excellent plasma resistance are fitted in gas delivery holes. Gas delivery holes (128a) arranged in an upper electrode (128) of an etching device (100) are formed in shapes conforming to the outer shapes of insulation members (144). Each insulation member (144) is made of polyether-ether-ketone, polyimide, polyether-imide and the like, and has steps (144a) formed on the outer side surface. The longitudinal length of each insulation member (144) is made smaller than that of the gas delivery holes (128a). Each insulation member (144) is formed with a piercing hole (144d) in the longitudinal direction, with a portion of the piercing hole (144d) near the processing chamber (102) progressively expanding in diameter (tapered) toward the processing chamber (102). The insulation members (144) are inserted into and press-fitted in the gas delivery holes (128a) from the delivery port side of the gas delivery holes (128a) until the steps (144a) engage the shoulders (128b) formed on the inner walls of the gas delivery holes (128a). At this time, the insulation members (144) protrude from the surface of the upper electrode (128) on the side of the susceptor (110). |
