| 发明名称 |
Tantalum sputtering target and method of manufacture |
| 摘要 |
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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| 申请公布号 |
US6323055(B1) |
申请公布日期 |
2001.11.27 |
| 申请号 |
US19990316777 |
申请日期 |
1999.05.21 |
| 申请人 |
THE ALTA GROUP, INC. |
发明人 |
ROSENBERG HARRY;OZTURK BAHRI;WANG GUANGXIN;LARUE WESLEY |
| 分类号 |
C01G35/00;C22B3/04;C22B5/00;C22B5/04;C22B9/22;C22B34/24;C22C27/02;C23C14/14;C23C14/34;(IPC1-7):H01L21/00 |
主分类号 |
C01G35/00 |
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