发明名称 |
Process for fabricating a semiconductor device component by oxidizing a silicon hard mask |
摘要 |
A process for fabricating a semiconductor device includes the formation of a hard-mask using lithographic techniques, followed by an oxidation process to reduce the lateral dimension of the hard-mask. The oxidation process is carried out by selectively oxidizing an oxidizable layer overlying an etch-stop layer. Upon completion of the oxidation process, the etch-stop layer is removed and a residual layer of oxidizable material is then used as a mask for the formation of a device component. The lateral dimension of the residual layer can be substantially less than that achievable by optical lithographic techniques.
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申请公布号 |
US6323093(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US19990290088 |
申请日期 |
1999.04.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;BELL SCOTT ALLAN;YANG CHIH-YUH |
分类号 |
H01L21/28;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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