| 发明名称 |
Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory |
| 摘要 |
A nonvolatile ferroelectric capacitor comprising Bi4-xAxTi3O12 thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi4Ti3O2. Nonvolatile element A in perovskite layer of B4-xAxTi3O12 suppress the generation of oxygen vacancies in the perovskite layer, thereby improving fatigue behavior.
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| 申请公布号 |
US6323512(B1) |
申请公布日期 |
2001.11.27 |
| 申请号 |
US20000520691 |
申请日期 |
2000.03.07 |
| 申请人 |
TAE-WON NOH |
发明人 |
NOH TAE-WON;PARK BAE-HO;KANG BO-SOO;BU SANG-DON |
| 分类号 |
H01L27/04;H01B3/12;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/92;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/04 |
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