发明名称 Dual-sided undershoot-isolating bus switch
摘要 Both buses connected to a bus switch are protected from undershoots. A bus switch transistor is an n-channel metal-oxide-semiconductor (MOS) with its source connected to a first bus and its drain connected to a second bus. An enable gate drives the gate node of the bus switch transistor high to enable or low to disable. Undershoot sensing circuits are attached to the first and second bus. When a low-going transition is detected by an undershoot sensing circuit, an n-channel connecting transistor is turned on, connecting the bus with the low-going transition to the gate node through a grounded-gate n-channel transistor. If an undershoot occurs, it is coupled to the gate node. Since both the gate and source of the bus switch transistor are coupled to the undershoot, the gate-to-source voltage never reaches the transistor threshold and the bus switch transistor remains off.
申请公布号 US6320408(B1) 申请公布日期 2001.11.20
申请号 US20010681236 申请日期 2001.03.02
申请人 PERICOM SEMICONDUCTOR CORP. 发明人 KWONG DAVID
分类号 H03K19/0185;(IPC1-7):H03K19/017 主分类号 H03K19/0185
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