发明名称 COATING DEVELOPING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a coating developing system which can suppress adhesion of micro impurities such as molecular of oxygen, etc., to a wafer. SOLUTION: Gas supply means 70, 71, and 72, which supply an inert gas to every area, i.e., a cassette station 2, a processing station 3, and an interface 4 that are partitioned by a partitioning plates 10 and 60 of a coating developing system 1, are provided respectively on the upper side of the areas. Exhaust pipes 75, 76, and 77 are provided respectively on the lower side of the areas, so as to exhaust an atmosphere within every area. An inert gas such as oxygen containing no impurities or fine particles is supplied to every area through the gas supply means 70, 71, and 72, and the atmosphere within every area is exhausted from the exhaust pipes 75, 76, and 77, thereby keeping an atmosphere within every area to be clean.
申请公布号 JP2001319845(A) 申请公布日期 2001.11.16
申请号 JP20000133304 申请日期 2000.05.02
申请人 TOKYO ELECTRON LTD 发明人 MATSUYAMA YUJI;KITANO JUNICHI;KITANO TAKAHIRO
分类号 G03F7/16;G03F7/20;G03F7/30;H01L21/027 主分类号 G03F7/16
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