| 摘要 |
PROBLEM TO BE SOLVED: To provide a level converting circuit, which can be surely operated and is capable of high-speed operation, power consumption reduction and area reduction even when the threshold voltage of a transistor is deviated from a designed value by a dispersion in a production process. SOLUTION: In response to input signals CLK1 and CLK2, a control circuit 100 of a control part 10 sets the gate potential of a p-channel MOSFET 201 in a driver part 20 to a level lowered from a power supply potential VDD for more than a threshold voltage Vtp of a p-channel MOSFET 101 and sets the gate potential of an n-channel MOSFET 202 to a level increased from the low level of the input signal CLK1 for more than a threshold voltage Vtn of an n-channel MOSFET 102. Thus, one of p-channel MOSFET 201 and n-channel MOSFET 202 is strongly turned on and the other is weakly turned on. |
