摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing method of a semiconductor substrate that does not require any large-scale, complicated, and accurate devices, can simply obtain a fixed polishing rate, and at the same time prevents alkaline metal contamination or the like to the semiconductor substrate and a manufacturing line. SOLUTION: In this polishing method of the semiconductor substrate, slurry S where silica is dispersed is supplied onto a surface plate 3 where polishing cloth 4 is stuck, and a plate 5 for retaining a semiconductor substrate W is pressed and rotated, thus polishing the surface of the semiconductor substrate W. In this case, organic alkali is added to the slurry S so that pH becomes 10.5 to 11.6.</p> |