发明名称 POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a polishing method of a semiconductor substrate that does not require any large-scale, complicated, and accurate devices, can simply obtain a fixed polishing rate, and at the same time prevents alkaline metal contamination or the like to the semiconductor substrate and a manufacturing line. SOLUTION: In this polishing method of the semiconductor substrate, slurry S where silica is dispersed is supplied onto a surface plate 3 where polishing cloth 4 is stuck, and a plate 5 for retaining a semiconductor substrate W is pressed and rotated, thus polishing the surface of the semiconductor substrate W. In this case, organic alkali is added to the slurry S so that pH becomes 10.5 to 11.6.</p>
申请公布号 JP2001319900(A) 申请公布日期 2001.11.16
申请号 JP20000137742 申请日期 2000.05.10
申请人 TOSHIBA CERAMICS CO LTD 发明人 SAKAMOTO TAKAO;TAKAHASHI YOSHIKI;KITA YASUYUKI;TOMATSU MOTOO;HOSHI YOSHIHIKO;SAITO MASAYOSHI;KAGOSHIMA TETSUHIRO
分类号 B24B57/02;B24B37/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B57/02
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