发明名称 PROCESSING SYSTEM OF SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a processing system of a substrate, in which adhesion of dust to the substrate can be prevented as much as possible at the time of irradiating amorphous silicon with an Xe-Cl excimer laser beam. SOLUTION: A movable substrate stage 32 for mounting a substrate 21 deposited with amorphous silicon is disposed in a processing chamber 31a. Amorphous silicon of the substrate 21 mounted on the movable substrate stage 32 is irradiated with an Xe-Cl excimer laser beam B by a beam irradiating means. Each inner face of the processing chamber 31a is applied with a processing chamber viscous material 34 having viscosity. Dust floating in the processing chamber 31a adheres to the processing chamber viscous material 34 and adhesion of dust to the substrate 21 can be prevented as much as possible.
申请公布号 JP2001319890(A) 申请公布日期 2001.11.16
申请号 JP20000137666 申请日期 2000.05.10
申请人 TOSHIBA CORP 发明人 KAWAMURA SHINICHI
分类号 G02F1/13;G02F1/1333;H01L21/208;H01L21/268;(IPC1-7):H01L21/268;G02F1/133 主分类号 G02F1/13
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