| 发明名称 |
Method of depositing thin film of metal oxide by magnetron sputtering apparatus |
| 摘要 |
A method of depositing a thin film of metal oxide by a magnetron sputtering apparatus with a mobile magnet for creating a magnetic field reciprocating across a film deposition region, is characterized in that the magnet reciprocates no more than twice in depositing a single thin film of metal oxide.
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| 申请公布号 |
US6315874(B1) |
申请公布日期 |
2001.11.13 |
| 申请号 |
US20000491183 |
申请日期 |
2000.01.25 |
| 申请人 |
KANEKA CORPORATION |
发明人 |
SUZUKI TAKAYUKI;NISHIO HITOSHI |
| 分类号 |
H01L21/203;C23C14/08;C23C14/35;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
H01L21/203 |
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