Compound semiconductor light emitter and a method for manufacturing the same

摘要

A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to the first compound semiconductor layer and is isolated from the second compound semiconductor layer. A current spreading layer is formed on the second compound semiconductor layer and a block is formed on the second compound semiconductor layer. A second electrode is formed on the block and is connected to the current spreading layer.