METHOD FOR FORMING METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal film formation method is provided to entirely and easily fill a metal material into a contact hole and to simplify manufacturing process by using a plasma etching. CONSTITUTION: A first barrier layer(34) and a second barrier layer(36a) are sequentially formed on an insulating pattern(32) having a contact hole. The surface of the second barrier layer(36a) is then planarized by using a plasma etching. After forming a metal film(38) used as a metal interconnection on the second barrier layer(36a), the metal film(38) is entirely filled into the contact hole by performing reflow process at a high temperature.