| 发明名称 |
Method of etching a contact by RIE using a low temperature carbon rich oxy-nitride layer for improving etching selectivity |
| 摘要 |
<p>Reactive ion etch (RIE) selectivity during etching of a feature nearby embedded structure is improved by using a silicon oxynitride layer (8) formed with carbonization throughout layer. <IMAGE></p> |
| 申请公布号 |
EP1152460(A2) |
申请公布日期 |
2001.11.07 |
| 申请号 |
EP20010109862 |
申请日期 |
2001.04.23 |
| 申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAUDHARY, NIRMAL;CONTI, RICHARD A. |
| 分类号 |
H01L21/311;H01L21/314;H01L21/316;H01L21/8242;(IPC1-7):H01L21/60;C23C16/36;H01L21/768 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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