| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PURPOSE: To appropriately form the shape of a gate electrode having SiGe. CONSTITUTION: A gate electrode 15G having an SiGe layer 15b is subjected to patterning by a dry etching method, and then is subjected to plasma treatment (post-treatment) in Ar/CHF3 gas atmosphere, thus forming the gate electrode 15G without generating any side etching on both sides of the gate electrode 15G (SiGe layer 15b).
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| 申请公布号 |
KR20010094985(A) |
申请公布日期 |
2001.11.03 |
| 申请号 |
KR20010014254 |
申请日期 |
2001.03.20 |
| 申请人 |
HITACHI. LTD. |
发明人 |
IKEDA TAKENOBU;KUNIYOSHI SHINJI;KUSAKARI KOUSUKE;TADOKORO MASAHIRO;YAMAZAKI KAZUO |
| 分类号 |
H01L21/02;H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H01L21/8238;H01L27/092;H01L27/10;H01L29/43;H01L29/78;H01L29/786;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/02 |
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