发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has a long life and a high reliability by suppressing the increase in temperature of an aluminum bonding pad due to heat transmitted through a semiconductor substrate in the semiconductor device, to prevent the growth of voids or generation of corrosion in a joint between a gold wire and aluminum, and also provide a method of manufacturing the same. SOLUTION: In the semiconductor device having the aluminum bonding pad 3 on the semiconductor substrate 1, a heat insulation region 2 for shielding the heat transmitted to the bonding pad 3 through the semiconductor substrate 1 is formed of a heat insulation material, The semiconductor device is manufactured by a method wherein a wire bonding is carried out with a pad supporting section being supported by an auxiliary member from the rear face side and thereafter the auxiliary member is removed and then the heat insulation region is formed.
申请公布号 JP2001308137(A) 申请公布日期 2001.11.02
申请号 JP20000125181 申请日期 2000.04.26
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 TAKAKURA NOBUYUKI;YASUIKE NORIYUKI;KUZUHARA KAZUNARI;UEDA MICHIHIKO
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/522 主分类号 H01L23/52
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