发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a long life and a high reliability by suppressing the increase in temperature of an aluminum bonding pad due to heat transmitted through a semiconductor substrate in the semiconductor device, to prevent the growth of voids or generation of corrosion in a joint between a gold wire and aluminum, and also provide a method of manufacturing the same. SOLUTION: In the semiconductor device having the aluminum bonding pad 3 on the semiconductor substrate 1, a heat insulation region 2 for shielding the heat transmitted to the bonding pad 3 through the semiconductor substrate 1 is formed of a heat insulation material, The semiconductor device is manufactured by a method wherein a wire bonding is carried out with a pad supporting section being supported by an auxiliary member from the rear face side and thereafter the auxiliary member is removed and then the heat insulation region is formed. |
申请公布号 |
JP2001308137(A) |
申请公布日期 |
2001.11.02 |
申请号 |
JP20000125181 |
申请日期 |
2000.04.26 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
TAKAKURA NOBUYUKI;YASUIKE NORIYUKI;KUZUHARA KAZUNARI;UEDA MICHIHIKO |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/522 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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