| 摘要 |
PROBLEM TO BE SOLVED: To obtain an InSb thin film substrate which has high sensitivity and reliability and is applicable to a magnetoelectric transducer. SOLUTION: An Sb film as a first layer 3 and an In film 4 as a second layer having prescribed thicknesses are laminated on substrates 1A, 1B to constitute stoichiometric composition. This InSb thin film substrate 10 has an InSb compound semiconductor crystal film 5 of stoichiometric composition formed on the In film 4. The thickness of the Sb film 3 as the first layer is 1.5-6 nm.
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