| 摘要 |
PROBLEM TO BE SOLVED: To provide a selective method of an exposure threshold whereto the correspondent line-width variation of a formed pattern is made small even when the blooming quantity of the formed pattern is varied during its exposure operation. SOLUTION: With respect to a pattern (1) or a pattern (2) generated when the variation of the blooming of an optical system is±10 nm, the relation between the exposure threshold and the line-width variation of each pattern is represented by such lines (1) or lines (2) as shown in the figure. It is understood from an intersection A of both the corresponding lines (1), (2) that the allowable exposure threshold for making small the line-width variations of both the patterns (1), (2) is set to 0.423. The line-width variation corresponding to the intersection A is 2.1 nm. Since the blooming variation is±10 nm, the ratio of this line-width variation to the blooming variation is about 1/5. When an allowable value of the line-width variation corresponding to the blooming variation of 10 nm is set to 1/3, there is brought a scopeθof the exposure threshold into 0.381<=θ<=0.464, by taking the maximum and minimum among the points whereat four auxiliary lines intersect the line of a line-width variation equal to 10/3 nm=3.33 nm.
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