| 摘要 |
<p>The optical recording medium (20) has a substrate (1) and a stack (2) of layers provided thereon. A phase change recording layer (5), having a melting point Tmp is sandwiched between a first (3) and a second (7) dielectric layer. A crystallization-accelerating layer (4, 6) is being interposed in contact with the recording layer (5). Further a reflective layer (8) is present and an optional cover layer (9). The crystallization-accelerating layer (4, 6) consists of a binary metal alloy or a semiconductor and has a melting point Tmg at least 250 °C higher than the melting point Tmp of the recording layer (5) and has a crystal structure similar to the crystalline state of the recording layer (5).</p> |
