| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a highly flat epitaxial wafer, by which the epitaxial wafer high in flatness can be obtained and the rate of inferior products can be reduced without adding a new process and causing lowering of flatness after epitaxially growing. SOLUTION: After processing a substrate so as to make it flat, the flatness of an epitaxially grown wafer is estimated before epitaxially growing, and then epitaxial growth is carried out using only a substrate satisfying required standards.
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