| 发明名称 |
Semiconductor integrated circuit arrangement fabrication method |
| 摘要 |
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
|
| 申请公布号 |
US6309980(B1) |
申请公布日期 |
2001.10.30 |
| 申请号 |
US20000564754 |
申请日期 |
2000.05.04 |
| 申请人 |
HITACHI, LTD. |
发明人 |
TOKUNAGA TAKAFUMI;OKUDAIRA SADAYUKI;MIZUTANI TATSUMI;TAGO KAZUTAMI;KAZUMI HIDEYUKI;YOSHIOKA KEN |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/70;H01L21/768;H01L21/77;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
