Micro-mechanical inertial sensors

摘要

Micromechanical inertial sensors are formed of a plurality of substantially-planar semiconductor wafers interspersed with oxide layers. The sensitive element is located within an internal aperture of a wafer of the device and is separate therefrom. It is connected to an overlying oxide layer at pedestals that minimize contact area to thereby reduce stray capacitance. Portions of side edges of the various wafers are successively recessed to create topside-exposed wafer sections that permit the grounding of all exposed portions of the device as operational potentials are applied to internal electrodes and sensitive elements.