METHOD TO DECREASE DISHING RATE DURING CMP IN METAL SEMICONDUCTOR STRUCTURES,申请号KR1020017006256-传众专利搜索

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发明名称	METHOD TO DECREASE DISHING RATE DURING CMP IN METAL SEMICONDUCTOR STRUCTURES
摘要
申请公布号	KR20010093086(A)	申请公布日期	2001.10.27
申请号	KR1020017006256	申请日期	2001.05.17
申请人		发明人
分类号	H01L21/304	主分类号	H01L21/304
代理机构		代理人
主权项
地址

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