发明名称 |
Methods of forming integrated circuitry methods of forming thin film transistors, integrated circuitry and thin film transistors |
摘要 |
An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; c) depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and d) anisotropically a etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. Such is utilizable to make thin film transistors and other circuitry.
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申请公布号 |
US6306696(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US19980025214 |
申请日期 |
1998.02.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DENNISON CHARLES H.;MANNING MONTE |
分类号 |
H01L21/336;H01L21/8244;H01L27/11;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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