发明名称 |
Coplanar type polysilicon thin film transistor and method of manufacturing the same |
摘要 |
The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate sequentially; patterning the insulating layer and the gate metal layer to form a gate insulating layer and a gate electrode; treating an impurity and a catalyst metal on the amorphous silicon layer using the gate electrode as a mask; and applying a DC voltage to both terminals of the amorphous silicon layer to form a polysilicon layer, the polysilicon layer having source and drain regions and an active area.
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申请公布号 |
US6306692(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US20000576430 |
申请日期 |
2000.05.22 |
申请人 |
LG. PHILIPS LCD., CO. LTD |
发明人 |
SEO SEONG MOH;KIM SUNG KI |
分类号 |
H01L21/20;H01L21/326;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/331;H01L21/479 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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