发明名称 |
Anti-fuse for programming redundancy cell, repair circuit having programming apparatus, and fabrication method of anti-fuse |
摘要 |
An anti-fuse for programming a redundancy cell and a repair circuit having a programming apparatus are disclosed. The circuit includes a half power voltage supplier for supplying a half power voltage, a programming voltage supplier for supplying a programming voltage for exchanging a defective cell of the memory cell array with a redundancy cell, a ground voltage supplier for supplying a ground electric potential in response to an address signal of the memory cell, an anti-fuse for receiving a voltage of the half power voltage supplier and charging the same in the normal operation and breaking a dielectric film in accordance with a voltage difference between the programming voltage supplier and the ground voltage supplier during the programming operation for thereby implementing a programming, and an output unit for outputting an output signal based on the programmed state of the anti-fuse in accordance with a voltage applied from a node commonly connected with the half power voltage supplier, the programming voltage supplier, and the anti-fuse, for thereby enhancing a fabrication yield and reliability of a memory apparatus by easily exchanging a defective cell with a redundancy cell using a threshold voltage of a dielectric film without using an expensive laser apparatus.
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申请公布号 |
US6306689(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US19980220801 |
申请日期 |
1998.12.28 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM MI-RAN;CHANG MYOUNG-SIK;KIM JIN-KOOK |
分类号 |
H01L21/82;G11C29/04;H01L21/66;H01L21/8246;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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