Reading device for integrated circuit memory

摘要

A device for reading a memory including precharging circuits for precharging the inputs of a differential amplifier to a precharging voltage. The precharging voltage may be at an intermediate voltage level between a precharging voltage level of the bit lines and the voltage level of the logic supply voltage. This provides for a very fast build-up, during a following evaluation phase, of the output of the amplifier in a state corresponding to that of the cell being read. An internal detection circuit may also be included to detect an end of the precharging to stop the precharging circuit and activate the read current generator for the evaluation phase.